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1N4448W
Document number: DS12002 Rev. 21 - 2
2 of 4
www.diodes.com
April 2014
? Diodes Incorporated
1N4448W
Maximum Ratings
(@TA
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage
VRM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75 V
RMS Reverse Voltage
VR(RMS)
53 V
Forward Continuous Current
IFM
500 mA
Average Rectified Output Current
IO
250 mA
Non-Repetitive Peak Forward Surge Current @t = 1.0μs
@t = 1.0s
IFSM
4.0
1.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
PD
400 mW
Thermal Resistance Junction to Ambient Air (Note 5)
RθJA
315 °C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150 °C
Electrical Characteristics
(@TA
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 6)
V(BR)R
75
?
V
IR
= 10
μA
Forward Voltage
VFM
0.62
?
?
?
0.72
0.855
1.0
1.25
V
IF
= 5.0mA
IF
= 10mA
IF
= 100mA
IF
= 150mA
Peak Reverse Current (Note 6)
IRM
?
2.5
50
30
25
μA
μA
μA
nA
VR
= 75V
VR
= 75V, T
J
= +150°C
VR
= 25V, T
J
= +150°C
VR
= 20V
Total Capacitance
CT
?
4.0 pF VR
= 0, f = 1.0MHz
Reverse Recovery Time
trr
?
4.0 ns IF
= I
R
= 10mA,
Irr = 0.1 x IR, RL
= 100
?
Notes: 5. Part mounted on FR-4 PC board with 1 inch by 1 inch pad layout.
6. Short duration pulse test used to minimize self-heating effect.
0 25 50 75 100 125 150
P
,
P
O
WE
R
D
ISSI
P
A
T
I
O
N
(mW)
D
T , AMBIENT TEMPERATURE ( C)A
°
Fig. 1 Power Derating Curve
0
200
400
500
100
300
R = 315°C/WθJA
0.1
0 200 400 600 800 1000 1200 1400 1600
1
10
100
1000
Figure 2 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (mV)F
I , INSTANTANEOUS FORWARD CURRENT (mA)
F
T = 85°CA
T = 125°CA
T = 150°CA
T = -55°CA
T = 25°CA
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1N4448WRH
制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:400mW High Speed SMD Switching Diode